Positive electron resist

This electron photoresist is intended for fabrication of semiconductor devices, integrated circuits and photomasks by electronolithographic method.
Recommended developer – methylethylketone : isopropyl alcohol = 1 : 3.

Product parameters

Kinematic viscosity, mm2/s 20-25 at (20,0±0,1)°С
Dry residue mass part, % 9-11
Sensitivity to electrons with 10 keV energy, μc/cm2 9,3-12,0
Contrast 2,3-2,5
Производство
Премия призвание
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