Negative photoresists

Negativ Photoresist Series FN-11 (FN-11S, FN-11SK)

This series of negative photoresists is intended for application as protective light-sensitive material in photolithographic processes used for fabrication of semiconductor devices, integrated assemblies, precision printed circuit boards and forms, including chemical etching of copper, steel, chromium and other metals.

Any modification, ensuring formation of 1,0-3,5 μm film thickness, can be delivered on the consumer order.

Advisable Developer - white spirit

Product parameters FN-11S FN-11SK
Kinematic viscosity, mm2/s 14 - 19 14 19*
Dry residue mass part, % 13-17 28-32
Resolution 10 m 10 m*
Parameter for FN-11SK, diluted with xylene (1:1)

Negativ Photoresist UFN-1M

This negative photoresist is intended for application in microlithographic processes of producing the devices with minimum element dimensions of (0,6±0,1) μm.

Developer aqueous solution of KOH

Product parameters

Kinematic viscosity at (20,0±0,1)°C mm2/s 7,0-8,4
Dry residue mass part, % 24-26
Optical density at:
265 nm
280 nm

Filterability, g-1, not over 0,01
Unexposed film stability in the developer, s 30-90

Chemically Amplified Photoresist Series FN-16U: FN-16U-2, FN-16U-4, FN-16U-7

This series of negative i-line (365 nm) photoresists is analogous to AZ nLOF 2020, AZ nLOF 2035 and AZ nLOF 2070 of the MicroChemicals.

FN-16U series may be used as protective light-sensitive material in precision photolithographic processes for IC device fabrication. FN-16U photoresists are formulated for the lift-off lithography process. They make it possible to run a standard lithography process to get the desired lift-off profiles.

Any modification, ensuring formation of 0,5 - 7,5 m film thickness, can be delivered on the consumer order.

The recommended developers for the FN-16U resists are metal-ion-free PP-051MC, AZ 726 MIF, AZ 826 MIF, based on 2.38 % TMAH (tetramethylammonium hydroxide) in H2O

Resist Removal
Solvents such as acetone, DMSO are suited removers, if the resist film thickness and degree of crosslinking are not too high. Generally, heating these removers up to 60 - 80C, or/and ultrasonic treatment, might be required to fasten the resist removal in the case of very thick or strongly crosslinked resist films.

Product parameters

Product parameters FN-16U-2 FN-16U-4 FN-16U-7
Resolution, m 5 8 10
i-line dose to print, mJ/cm2 10-20 20-30 25-35
Dry residue mass part, % 342 452 502
Film thickness range (3000 rpm), m 1,8-2,2 3,5-4,5 5,8-7,5